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A research team has demonstrated the world's fastest silicon-based device to date. The investigators operated a silicon-germanium (SiGe) transistor at 798 gigahertz (GHz) fMAX, exceeding the previous ...

FRANKFURT, Germany, February 19, 2002 -- IHP, a leading microelectronics innovation center focused on wireless and broadband communications has licensed the new high-performance, low-power, 32-bit ...

X-FAB Silicon Foundries and IHP - Leibniz Institute for High Performance Microelectronics have announced a major industry-academic partnership. The objective of the cooperation between these two ...

PLAINVIEW, N.Y., Aug. 12, 2020 (GLOBE NEWSWIRE) -- Veeco Instruments Inc. (NASDAQ: VECO) today announced that IHP Microelectronics, based in Frankfurt, Germany, has selected Veeco’s TurboDisc® metal ...

Meylan, FRANCE and Frankfurt an der Oder, GERMANY -- June 8, 2009 – IHP, one of Germany’s largest interdisciplinary application-oriented research centers in the fields of high performance ...

Electrical engineers at Georgia Institute of Technology have determined a transistor designed and built at IHP-Innovations for High Performance Microelectronics in Germany is the fastest silicon-based ...

FRANKFURT (ODER), Germany– In a move to create 5-GHz processors for wireless local area networks, Germany's Innovations for High Performance (IHP) microelectronics institute here today announced it ...

Sub-THz frequency systems are getting more and more attention. Addressing this migration, Rohde & Schwarz, in collaboration with Innovations for High Performance Microelectronics (IHP), claimed the ...